Electron transport in III-VI and IV-VI mono-chalcogenide nanostructures

One focal point in recent studies of 2D semiconductors beyond transition metal dichalcogenides (e.g. MoS₂) is non-transition metal based III-VI and IV-VI monochalcogenides. In this talk, I will highlight our transport studies of monochalcogenide InSe, SnS and SnSe for future 2D semiconductor applications. First, few and multilayer InSe nanoflakes are demonstrated to be promising 2D semiconductor nanostructures with high electron mobility and gate tunable Rashba spin-orbit coupling for high-performance n-type transistor and spintronic devices. Then I will discuss the gate and doping control of nanostructured IV-VI monochalcogenide SnS and SnSe's electrical and thermoelectric transport properties. In particular, the impact of SnS and SnSe's intrinsic p-type nature in the device behavior will be addressed. References: Nano Letters 15 , 3815 (2015); Nano Letters 18, 4403 (2018); Nanoscale 8, 19050 (2016); Jour of Appl Phys, 123, 115109 (2018).