Material design of indium-based compounds: possible candidates for charge, valence and bond disproportionation and superconductivity

ORAL

Abstract

We design and investigate the physical properties of new indium compounds
AInX$_{3}$ (A = alkali metals, X = F or Cl). We find nine new indium-based materials in their ground state and are thermodynamically stable but are not reported in Inorganic Crystal Structure Database (ICSD). We also discuss several metastable structures. This new series of materials display multiple valences, charge and bond disproportionation, and dimerization. The most common valence of In is 3+. We also find two rare alternatives, one has In$^{2+}$ with In-In dimerization and the other shows valence disproportionation to In$^{1+}$ and In$^{3+}$ with bond disproportionation. We study the possibility of superconductivity in these new In compounds and find that CsInF$_{3}$ has a transition temperature of about 24 K with sufficient hole doping and pressure.

Presenters

  • Chang-Jong Kang

    Rutgers, physics, Pohang University of Science and Technology, Rutgers University, New Brunswick, Department of Physics and Astronomy, Rutgers University

Authors

  • Chang-Jong Kang

    Rutgers, physics, Pohang University of Science and Technology, Rutgers University, New Brunswick, Department of Physics and Astronomy, Rutgers University

  • Gabriel Kotliar

    Rutgers University and Brookhaven National Laboratories, Department of Condensed Matter Physics and Materials Science, Upton, New York 11973, USA, Brookhaven National Laboratory, Rutgers University, New Brunswick, Brookhaven National Laboratory, Department of Physics, Rutgers University, Physics, Rutgers University, Rutgers University, New Jersey, USA, Physics and Astronomy Department, Rutgers University, Department of Physics and Astronomy, Rutgers University, NJ