Electron spin coherence measurements of high-density silicon vacancy ensembles in silicon carbide

High density ensembles of defects in solids hold the potential to realize highly correlated states or high sensitivity quantum sensors. To explore the feasibility of this development path for silicon vacancies in silicon carbide, we will present electron spin coherence measurements of neutron irradiated samples of silicon carbide. To date, published measurements of the electron spin coherence time of this system have primarily been with electron or proton irradiated samples where the density of defects is not uniform throughout the sample. Since the density of defects is uniform throughout the sample with neutron irradiation, these measurements will shed light regarding the observed anomalies (Phys. Rev. B 95, 045206 (2017)) in the density dependence of the spin coherence time with silicon vacancy ensembles.