Epitaxial growth of large grain size polycrystalline silicon on SiO₂ by reduced pressure chemical vapor deposition

Epitaxial growth of polycrystalline silicon (poly-Si) on SiO₂ was successfully carried out by reduced pressure chemical vapor deposition (RP-CVD) using SiH₄/H₂ mixtures. The growth rate and grain size of ploy-Si were significantly improved by increasing the epitaxial temperature. The film deposition rate was 3.1nm/s with the epitaxial temperature at 820°C. The grain size of the poly-Si film could reach as large as 700nm on annealed seed layer. Good quality poly-Si film with large and uniform grain was obtained by direct deposition on SiO₂ substrate. The electrical properties of the doped poly-Si film were tested by Hall Effect and four-probe method.