Voltage Controlled Logic-in-memory Architecture in Manganite Nanowire

Logic-in-memory Architecture in one single device unit is highly attractive in developing next-generation nonvolatile devices and shows potential to overcome the von Neumann bottleneck in conventional computers. However, most non von Neumann prototype devices require high current density, resulting in substantial heat and power consumption when miniaturized. Here, we utilize the electric field induced metal-insulator transitions in manganites and demonstrate that the electric field effect can be exploited to implement a logic-in-memory architecture in manganite nanowire. Highly repeating eight-level resistive states along with Boolean logic operations can be simultaneously performed in one single device unit. This architecture only requires current density of 4×10¹ A/cm², which is four orders of magnitude smaller than state-of-the-art designs. Such device is promising for future computing systems beyond von Neumann architecture with low heat dissipation and power consumption.