Voltage controlled memory device based on fixed magnetic skyrmions
ORAL
Abstract
1. Sci. Rep., 6, 31272, 2016.
2. ACS Appl Mat. Inter. 10 (20), pp 17455–17462, 2018.
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Presenters
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Dhritiman Bhattacharya
Virginia Commonwealth University, Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University
Authors
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Dhritiman Bhattacharya
Virginia Commonwealth University, Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University
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Seyed Armin Razavi
Electrical and Computer Engineering, University of California, Los Angeles, University of California, Los Angeles
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Hao Wu
Electrical and Computer Engineering, University of California, Los Angeles, University of California, Los Angeles, Electrical and Computer Engineering Department, University of California, Los Angeles
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Kang L. Wang
University of California, Los Angeles, University of California Los Angeles, ECE, UCLA, Electrical and Computer Engineering Department, University of California, Los Angeles
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Jayasimha Atulasimha
Virginia Commonwealth University, Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Virginia Commonwealth Univ