Transport and photoresponse study of Bulk MoS₂

Molybdenum disulfide (MoS₂) or Molybdenite were known as an indirect gap semiconductor with energy gap of 1.8 eV. More recently, it turns out that in 2D morphology (atomic thin film case) MoS₂ hosts novel physical properties including high optical absorption coefficient. To be used as a common semiconductor material within electronic and optoelectronics industry, one needs to know the types of impurity atoms within by-product powder of MoS₂ from copper extraction factory. We investigated structural properties of powder MoS₂ through PXRD, which confirm MoS2 with reasonable purity. The powder used for bulk polycrystalline sample growth through common melting techniques. Transport measurements at cryogenic temperatures done to check conductivity of our bulk sample. Due to unintended dopant species, we observed conductivity dependence on temperature in range of 80-300 K. We plan to present our finding through a poster at APS march meeting 2019 being held at Boston.