Electrical Characterization of Semiconductor Nanostructure Based Capacitors

POSTER

Abstract

Semiconductor nanostructures are employed as dielectric materials to investigate the performance of a capacitor. We study the effect of geometry and the type and thickness of semiconductors on the total capacitance using electrical measurements. SrTiO3 nano-powder and GaAs and Si nanowires (NW) are chosen for their relatively high dielectric constant. For capacitor plates we deposit ~30 nm Au on both solid glass and flexible PMMA substrate using an electron beam deposition system. The vertically aligned 50 nm diameter GaAs NWs were grown using the Au catalyzed vapor-liquid-solid method. The Si NWs are randomly oriented with an average diameter of 70 nm. The SrTiO3 nano-particles are cubical with a width of around 30 nm. Parallel arrays of GaAs NWs, as well as a random distribution of Si NWs or SrTiO3 nano-powder, lying between two Au coated substrate is composing the capacitors. Capacitance measurements on the reference sample, Au plates with air dielectric spacer, reveal capacitance in the pico-Farad order at room temperature. Capacitor structures with semiconductor dielectrics however show an enhancement of the total capacitance, mainly explained by the semiconductor spacer weakening the effective internal electric.

Presenters

  • Masoud Kaveh-Baghbadorani

    Department of Physics and Astronomy, James Madison University, Harrisonburg, Virginia 22807, U.S.A., Department of Physics and Astronomy, James Madison University

Authors

  • Masoud Kaveh-Baghbadorani

    Department of Physics and Astronomy, James Madison University, Harrisonburg, Virginia 22807, U.S.A., Department of Physics and Astronomy, James Madison University

  • W Christopher Hughes

    Department of Physics and Astronomy, James Madison University

  • Maeven Luedke

    Department of Physics and Astronomy, James Madison University

  • Nikolas Roeske

    Department of Physics and Astronomy, James Madison University

  • Josh Mitri

    Department of Physics and Astronomy, James Madison University

  • Fazel Baniasadi

    Department of Physics, Virginia Tech

  • Chenggang Tao

    Physics, Virginia Tech, Department of Physics, Virginia Tech, Virginia Tech

  • Hoe Tan

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Department of Electronic and Materials Engineering, Australian National University

  • Mykhaylo Lysevych

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University

  • Chennupati Jagadish

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Department of Electronic and Materials Engineering, Australian National University