Visualization of domain and interfacial structures of Monolayer semiconductors by Nonlinear Optical Microscopy

POSTER

Abstract

Domain and interfacial structures of the monolayer transition metal dichalcogenides (TMD) are significant to diverse physics and performances. Unique carrier transportation and bandgap tunability could be engineered with inter-grain twisting, which provide an extra degree of freedom for device designing. Here, the correlation between GBs and inter-grain twisting in monolayer WS2 is studied using nonlinear microscopy. With the change of inter-grain twisting, domain and interfacial structures of the monolayer is monitored and studied.

Presenters

  • Chun An Chen

    National Tsing-Hua University, National Tsing Hua University, National Tsing Hua University

Authors

  • Chun An Chen

    National Tsing-Hua University, National Tsing Hua University, National Tsing Hua University

  • Ying-Yu Lai

    National Tsing-Hua University, National Tsing Hua University, National Tsing Hua University, Materials Science and Engineering, National Tsing Hua University

  • Po-Yen Lin

    Academia Sinica, Taiwan, Division of Core Facilities Imaging, Institute of Cellular and Organismic Biology, Academia Sinica, Taiwan

  • Xin-Quan Zhang

    National Tsing-Hua University, National Tsing Hua University, Materials Science and Engineering, National Tsing Hua University

  • Meng-Hsi Chuang

    National Tsing Hua University, National Tsing-Hua University, National Tsing Hua University, Materials Science and Engineering, National Tsing Hua University

  • Yi-Hsien Lee

    National Tsing-Hua University, National Tsing Hua University, National Tsing Hua University