Monolithic image sensor and optoelectronics of monolayer.

POSTER

Abstract

Development of advanced optoelectronic devices for ultrahigh speed, low power consumption, and low cost image sensors are emergent applications of Internet of Things (IoT). To achieve ultrasensitive image sensors, high responsivity, fast response speed, and low power consumption are required. Monolayer transition metal dichalcogenides (TMD) crystals are potential candidates for high performance optoelectronic devices with high responsivity and low power consumption. Here, persistent photoconductivity (PPC) of the monolayer TMD are studied and improved. Monolithic image sensor and optoelectronic transport properties of the MoS 2 are demonstrated.

Presenters

  • Chen Po-Han

    National Tsing Hua University

Authors

  • Chen Po-Han

    National Tsing Hua University

  • Chang-Ning Liao

    National Tsing Hua University

  • Meng-Hsi Chuang

    National Tsing Hua University, National Tsing-Hua University, National Tsing Hua University, Materials Science and Engineering, National Tsing Hua University

  • Kuan-Chang Chiu

    National Tsing Hua University

  • Meng-Chyi Wu

    National Tsing Hua University

  • Chih-Chao Yang

    National Tsing Hua University

  • Yi-Hsien Lee

    National Tsing Hua University, Materials Science and Engineering, National Tsing Hua University, National Tsing-Hua University