Hydrostatic pressure effect on the intraband absorption coefficient in a core-shell spherical GaAs/Al_xGa_1-xAs quantum dot

In this work we present the intraband absorption coefficient calculation in a core-shell spherical GaAs/Al_xGa_1-xAs quantum dot. The quantum dot is composed of GaAs and surrounded by three shells of AlGaAs and GaAs, respectively. The electronic structure is calculated within the effective mass approximation and considered the hydrostatic pressure effect using a numerically stable transfer matrix method. The intraband absorption coefficient is computed by means of the Fermi's Golden rules under the dipolar matrix approximation. We reported the absorption coefficient between the 1s and 1p states as a function of the internal and external radius size, Aluminium concentration and the hydrostatic pressure. The results show that the absorption coefficient undergoes a change in the magnitude as well as in the resonance peak location. These results can be used to improve the absorption tuning and could be useful for enhance the solar devices.