High energy particles detection through high mobility GaAs/Al_0.3Ga_0.7As QW Hall bar sensor

GaAs as a well-known semiconductor has been used widely for detection and different types of sensor fabrication for diverse purposes within last decades. We used high carrier density GaAs/Al_0.3Ga_0.7As QW with relatively high mobility with an ultimate goal of being used to fabricate high energy particles detector. The carrier density of our samples are relatively high (n_s=6.24×10¹¹ cm^-2) with hall mobility of 1.5×10⁵ cm^-2/V.s. The large Hall bars samples were fabricated form modulation doped MBE grown wafer used for our experimentations. The sample sits at the bottom of probe stick within VTI at Liquid nitrogen temperature (T=77 K) while chopped high energy particle beams (positrons) from Na²² source hit it. Through common lock-in technique we detected signal due to interaction of beam particles with 2DEGs confined within QW of our samples. We plan to present our findings through a poster at March 2019 APS meeting being held at Boston