Resistive switch on Iron oxides thin films

The resistive switch properties on binary oxides has largely studied due to the non-volatile properties and its potential to be used to develop data storage devices. The resistive switch has been attributed to the percolation of a conductor pathway across the insulator matrix. However, the properties of the growth of the conductor pathways and the speed of the switch between the different resistive states on iron oxide has not yet reports. In this work, we describe the mechanism of the resistive switch on the thin films of iron oxide growth by sputtering. The dynamics of growth of the conductor pathways in iron oxide and the speed of switch also will be reported.