Valley splitting in a van der Waals heterostructure WSe2/CrI3: A first-principles study

POSTER

Abstract



Atomically thin transition metal dichalcogenides (TMDs) have been considered as a wonderland for the research of valleytronics. Lifting the ±K valley degeneracy in TMDs has become an important research topic in the field of valleytronics. It is crucial to achieve large valley polarization for the development of valleytronics devices. In this work, we investigate the effects underpinning the ±K valley splitting in a van der Waals heterostructure WSe2/CrI3 based on first-principles calculations. We demonstrate that the stacking configuration affects the valley splitting dramatically and the influencing factors are discussed in details. The findings would further our basic understanding of the substrate effect on the valley degeneracy lifting in TMDs-based heterostructures beyond the WSe2/CrI3 and provide a useful guide to the valleytronic control in realistic applications.

Presenters

  • Zhiya Zhang

    National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University

Authors

  • Zhiya Zhang

    National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Lanzhou University

  • Xiaojuan Ni

    Department of Materials Science and Engineering, University of Utah, University of Utah

  • Huaqing Huang

    Department of Materials Science and Engineering, University of Utah, University of Utah, Physics, University of Utah

  • Lin Hu

    Department of Materials Science and Engineering, University of Utah, Beijing Computational Science Research Center, University of Utah

  • Feng Liu

    Department of Materials Science and Engineering, University of Utah, University of Utah