Thermoelectric Transport at Organic-silicon interface

Hybrid organic-inorganic materials are among the latest class of materials proposed for thermoelectric applications. The organic-inorganic interface is critical in determining the effective transport properties of the hybrid material. We present results on the thermoelectric properties of the F₄TCNQ－silicon interface. Transfer of electrons from silicon to F₄TCNQ results in holes trapped within the screening length of the interface that can move parallel to the interface. We report the response of these trapped charges to applied temperature differential and compare the thermoelectric transport properties of the silicon with and without F₄TCNQ. The results confirm the presence of interface charges and demonstrate enhanced interface thermoelectric power factor.