Electronic homogeneity of III-Nitride nanowire Light Emitting Diodes (LEDs) grown on amorphous and nanocrystalline metals

Conductive atomic force microscopy (c-AFM) is a powerful technique to probe electrical inhomogeneities at nanometer scale in as-grown nanowire ensembles without introducing uncertainty due to additional device processing steps. Using c-AFM, we investigated the nanoscale current uniformity of III-Nitride nanowire LEDs grown on Pt thin films and amorphous metal foil. In this talk, I will discuss the variation of the current distributions in GaN nanowire LEDs grown on p-Si and Pt thin films. By taking IVs on individual nanowires, we found that there is a reduction in the threshold voltage for the GaN nanowire LEDs grown on Pt films compared to those grown on p-Si.