Crop up of the B1l mode in high quality GaN nanowires due to isotopic disorder
ORAL
Abstract
The B1l and B1h vibrational modes of GaN are silent, i. e. they cannot appear neither in Raman nor in infra-red spectroscopies. However, the B1l mode appears with a small linewidth in the Raman scattering spectra on high quality ultra-narrow GaN nanowires, while the B1h mode does not. The simulltaneous appearance of the A1(LO) and B1l in the ultraviolet region indicates: a) that the B1l mode is related to a resonance effect, i. e. Fröhlich interaction plays a role and b) the mechanism allowing the appearance of the B1l does not allow the observation of the B1h. After performing density functional theory calculations and discarding several options we have concluded that the only difference between both modes is the isotopic composition [1]. While Ga, which contributes to the B1l mode, has mainly two isotopes, 69Ga and 71Ga, N, the main contributor to the high frequency mode, has basically one isotope, i.e. it is isotopically ordered.
[1] C. R-F et al., Nano Lett. 18, 5091 (2018).
[1] C. R-F et al., Nano Lett. 18, 5091 (2018).
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Presenters
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Andres Cantarero
Molecular Science Institute, University of Valencia, Spain
Authors
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Andres Cantarero
Molecular Science Institute, University of Valencia, Spain
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Carlos Rodriguez-Fernandez
Molecular Science Institute, University of Valencia, Spain
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Mohammed Almokhtar
Department of Physics, Assiut University, Egipt
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Wilfredo Ibarra-Hernandez
Facultad de Ingenieria, BUAP, Mexico
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Mauricio Morais.de Lima Jr.
Molecular Science Institute, University of Valencia, Spain
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Aldo Romero
Applied Physics Department, West Virginia University, USA
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Hajime Asahi
Institute of Scientific and Industrial Research, Osaka University, Japan