Fabrication and Measurement of Atomically Precise Single Electron Islands

Phosphorous donor devices fabricated in silicon with a scanning tunneling microscope (STM) are used as a discovery platform for everything ranging from quantum physics to ultra-efficient tunnel field effect transistors because the underlying hydrogen lithography step can be performed with atomic precision. Many of these devices designs rely on electrostatic gating to tune electrical tunneling through the device. It is expected that out-of-plane gates will be more efficient at gating than in-plane gates. We present on fabrication techniques for adding top gates to devices and the resulting low-temperature measurements on tunnel junctions and single electron islands.