Charging of a Single InAs QD with Electrically-Injected Holes using a Lateral Electric Field

InAs/GaAs quantum dot (QD) and quantum dot molecules (QDM) are self-assembled semiconductor nanostructures that can trap a single electron or hole in a 3-D potential-well. Grown by molecular beam epitaxy (MBE), they have excellent optical qualities that can be used in applications of quantum information processing and quantum computing. The property of a single QD can be tuned by external electric field, giving it great potential for scalable quantum photonic applications. Deterministically charging a QD with a single electron or hole has been demonstrated by embedding the QD in a diode structure and applying growth direction electric fields. Here, we report a new charging mechanism of a single QD using lateral electric field with a 3-electrode device. We designed a 3-electrode device that embeds a single QD in an unintentionally doped GaAs matrix. We fabricate the device with E-beam lithography and characterize a single QD’s photoluminescence under different bias configurations. We observe charging of a single hole through the lateral electric field, supported by device simulation using COMSOL. We will discuss the potential applications of a 2-D electric field on a single QD using a 3-electrode device.