Gate-tunable Aharonov-Bohm interference in Bi₂O₂Se nanowires

Semiconducting Bi₂O₂Se shows excellent air stability and high carrier mobility. High-quality single-crystalline Bi₂O₂Se nanowires were synthesized by means of gold-catalyzed vapor-liquid-solid growth. We fabricated nanowire-based devices and performed electron transport measurements down to low temperatures. Oscillations in magnetoresistance under the magnetic field oriented parallel to its axis with a period of the magnetic flux quantum were observed. The quantum oscillations which demonstrate the existence of coherent transport through closed-loop quantum states encircling the wire axis also show a tunable phase shift by the gate voltage. The results indicate clear gate-tuned Aharonov-Bohm interference of surface states in a semiconductor nanowire.