Photoluminescence Quantum Efficiency of III−V Nanowires on Silicon Substrates

The III−V nanowires monolithically grown on silicon substrates provide promising technologies for
integrating advanced photonic technologies on a silicon microelectronics. We report the
photoluminescence quantum efficiency of nanowires as well as the thermal quenching mechanism in
nanowires prepared by vapor−liquid−solid method. High-resolution spectroscopy, quantum yield and
temperature dependence measurements of photoluminescence intensity from nanowires
were performed. The data provides a picture of the quantum efficiency, thermal quenching processes
and activation energy levels of nanowires. The results provide an important step in the realization of
III−V quantum information and photonic devices on silicon platform.