2D Materials (Semiconductors) -- Emerging Materials II

FOCUS · V15

Presentations

  • First principles studies of 2D transition metal dichalcogenides on 3D magnetic oxides

    ORAL

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    Presenters

    • Elizabeth Peterson

      Physics, University of California, Berkeley

    Authors

    • Elizabeth Peterson

      Physics, University of California, Berkeley

    • Jeffrey B Neaton

      Molecular Foundry, Lawrence Berkeley National Lab, University of California, Berkeley, Lawrence Berkeley National Laboratory, Molecular Foundry, Lawrence Berkeley National Laboratory, Department of Physics, University of California, Berkeley, UC Berkeley/Lawrence Berkeley Natl Lab, Lawrence Berkeley National Lab, Berkeley, CA, Physics, University of California, Berkeley, Molecular Foundry, LBNL; UC Berkeley; Kavli ENSI, Lawrence Berkeley National Laboratory, University of California - Berkeley, Kavli Energy NanoSciences Institute at Berkeley

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  • Tunable band alignment in 2D ferroelectric In<sub>2</sub>Se<sub>3</sub> based van der Waals heterostructures

    ORAL

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    Presenters

    • Zhe Wang

      University of Science and Technology of China, Department of Physics, University of Science and Technology of China

    Authors

    • Zhe Wang

      University of Science and Technology of China, Department of Physics, University of Science and Technology of China

    • Wenguang Zhu

      University of Science and Technology of China, Department of Physics, University of Science and Technology of China, Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China

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  • Tuning band structures and electronic properties of few-layer InSe by uniaxial strain

    ORAL

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    Presenters

    • Chaoyu Song

      Fudan University

    Authors

    • Chaoyu Song

      Fudan University

    • Feng-Ren Fan

      Fudan University

    • Ningning Xuan

      Fudan University

    • Shenyang Huang

      Fudan University

    • Guowei Zhang

      Fudan University

    • Chong Wang

      Fudan University, International Center for Quantum Materials, Peking University

    • Zhengzong Sun

      Fudan University

    • Hua Wu

      Fudan University

    • Hugen Yan

      Fudan University

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  • First-principles studies on electronic band structure of PdSe<sub>2</sub> with GW approximation

    ORAL

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    Presenters

    • Han-gyu Kim

      Department of Physics, Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul 03722, Korea (the Republic of).

    Authors

    • Han-gyu Kim

      Department of Physics, Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul 03722, Korea (the Republic of).

    • Hyoung Joon Choi

      Department of Physics, Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul 03722, Korea (the Republic of)., Physics, Yonsei University, Department of Physics, Yonsei University, Seoul 03722, Korea, Department of Physics, and Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University

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  • Study of dipolar excitons in TiS<sub>3</sub> double layer

    ORAL

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    Presenters

    • Roman Kezerashvili

      Physics Department, New York City College of Technology, City University of New York, Physics, CUNY - City Tech, Physics Department, New York City College of Technology, City University of New York, New York, USA, CUNY Graduate Center, Physics, City Tech and Graduate Center The City University of New York

    Authors

    • Roman Kezerashvili

      Physics Department, New York City College of Technology, City University of New York, Physics, CUNY - City Tech, Physics Department, New York City College of Technology, City University of New York, New York, USA, CUNY Graduate Center, Physics, City Tech and Graduate Center The City University of New York

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  • Van der Waals charge-transfer interfaces

    ORAL

    –

    Presenters

    • Yuta Kashiwabara

      Department of Applied Physics, The University of Tokyo

    Authors

    • Yuta Kashiwabara

      Department of Applied Physics, The University of Tokyo

    • Masaki Nakano

      Department of Applied Physics, The University of Tokyo, University of Tokyo

    • Yuji Nakagawa

      Department of Applied Physics, The University of Tokyo, Department of applied physics, University of Tokyo, University of Tokyo

    • Yue Wang

      Department of Applied Physics, The University of Tokyo

    • Hideki Matsuoka

      Department of Applied Physics, The University of Tokyo, University of Tokyo

    • Yoshihiro Iwasa

      Department of Applied Physics, The University of Tokyo, University of Tokyo, Department of applied physics, University of Tokyo, Department of Applied Physics, University of Tokyo, Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo

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