Large Stark Tuning of InAs/InP Quantum Dots

Quantum dots are excellent sources of single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot lead to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue by controlling the emission energy of individual quantum dots. InAs/InP quantum dots are bright single-photon emitters in the telecommunication wavelength band. Stark tuning of these quantum dots has been previously limited to shifts below 1 nm due to the introduction of additional charges. Here, we demonstrate up to 8 nm of Stark tuning in the emission wavelength of InAs/InP quantum dots. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under the applied electric field. This result is an important step toward implementing multiple identical quantum emitters at telecom wavelengths, which is crucial for realizing complex quantum photonic circuits for quantum information processing.