Light localization in disordered medium by scattering dislocation sites

Threading dislocation defects at mismatch interfaces between III-V and Si substrate, act as light scattering sites in this disordered medium. Light get localized within the semiconductor film due to multiple scattering by these sites. We had studied the signature of such localizations in nonlinear regime (to avoid the dominating surface linear reflection). Localization signatures are observed in the series of optical measurements using a fiber scanning probe microscope that allows to analyze the light–matter interaction at these atomic irregularities in the material stacks.