Modeling transport in phosphorus δ-doped silicon tunnel junctions

Electrical devices based on Si:P δ layers can be fabricated with atomic precision, which could allow for the fabrication of high-efficiency tunneling field effect transistors (TFETs). While great strides have been made in fabricating nanoelectronics from Si:P δ layers, there is little agreement about the electronic structure of the Si:P δ layers. Furthermore, the transport properties of only a few devices have been modeled. We use a scalable model to study transport in nanoscale tunnel junctions made from Si:P δ layers, and we show that the transport properties of tunnel junctions can provide insight into the electronic structure of Si:P δ layers. We also compare our model to experimental results and find good agreement.