Surface Plasmon Polaritons in Chalcogenides

ORAL

Abstract

The surface plasmon polaritons is a highly investigated field of research due to their high potential applications for sensors, information technologies, high resolution imaging, to name a few. These collective electron oscillations are common at metal dielectric interfaces. However, they also exist in highly doped semiconductors, conducting oxide systems, and in many other systems with high carrier mobility. This poses the question of whether such resonances can be observed at the insulator interfaces with these novel materials. Chalcogenides, the general name of sulfides, selenides, tellurides can show highly anisotropic crystal structures, that gives them exotic properties such as topological surface state, superconductivity or negative dielectric permittivity. It was shown that Bi2Se3 supports Dirac plasmons, but the Dirac state is not the only reason for the existence of plasmon resonance in Bi2Se3. This material also has highly anisotropic dielectric properties allowing surface plasmon excitations. It is not the only chalcogenide system that can support them.
Here we show the electron energy loss spectroscopy and a finite difference frequency domain study for investigating Bi2Se3, and BaNbS.

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Presenters

  • Cigdem Ozsoy Keskinbora

    Harvard University

Authors

  • Cigdem Ozsoy Keskinbora

    Harvard University

  • Kundan Chaudhary

    Harvard University

  • Michele Tamagnone

    Harvard University, John A. Paulson School of Engineering and Applied Sciences, Harvard University

  • Yunbo Ou

    Dept. Of Physics, Plasma Science and Fusion Center and Francis Bitter Magnet Lab, Massachusetts Institute of Technology, MIT, Plasma Science and Fusion Center and Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Plasma Science and Fusion Center and Francis Bitter Magnet Laboratory, MIT, Cambridge, MA, 02139

  • Aravind Devarakonda

    MIT, Department of Physics, Massachusetts Institute of Technology

  • Takehito Suzuki

    MIT, Massachusetts Institute of Technology, Physics, Massachusetts Institute of Technology, Department of Physics, Massachusetts Institute of Technology

  • Joseph Checkelsky

    MIT, Massachusetts Institute of Technology, Physics, Massachusetts Institute of Technology, Department of Physics, Massachusetts Institute of Technology

  • Jagadeesh Moodera

    Dept. Of Physics, Plasma Science and Fusion Center and Francis Bitter Magnet Lab, Massachusetts Institute of Technology, MIT, Department of Physics, Massachusetts Institute of Technology, Massachusetts Institute of Technology, Department of Physics, Plasma Science and Fusion Center, and Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Plasma Science and Fusion Center and Francis Bitter Magnet Laboratory, MIT, Plasma Science and Fusion Center, and Francis Bitter Magnet Laboratory, and Department of Physics, MIT, Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Plasma Science and Fusion Center and Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Physics, Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Department of Physics, MIT, Cambridge, MA, 02139

  • Federico Capasso

    Harvard University, John A. Paulson School of Engineering and Applied Sciences, Harvard University

  • David Bell

    Harvard University, School of Engineering and Applied Sciences, Harvard University, Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University