Maximizing Alloy Graphene Interface Conductance
ORAL
Abstract
We present high throughput thermal conductance data at alloy/graphene interfaces as a function of alloy composition and adhesion layer thickness, with a maxima observed at 10 at. % Pd in Ni without an adhesion layer. Graphene contact research has been exclusively limited to pure metals, where the metal/graphene interface inhibits the flow phonons, quantified by the thermal interface conductance. For future electronics to fully capitalize on the revolutionary transport properties of graphene, sufficient heat dissipation at the contact interface is critical to performance. [1]
To make high throughput measurements, metal films with a continuous alloy composition gradient spanning two pure metals were deposited on monolayer graphene on SiO2/Si substrates. Frequency domain thermoreflectance was used to measure thermal interface conductance as a function of metal composition. Future measurements of electrical contact resistance will be done through transmission line measurement structures, in order to determine the optimal alloy concentration for both electrical and thermal transport across the interface.
[1] P. E. Hopkins, M. Baraket, E. V. Barnat, T. E. Beechem, S. P. Kearney, J. C. Duda, J. T. Robinson, and S. G. Walton, Nano Lett. 12, 590 (2012).
To make high throughput measurements, metal films with a continuous alloy composition gradient spanning two pure metals were deposited on monolayer graphene on SiO2/Si substrates. Frequency domain thermoreflectance was used to measure thermal interface conductance as a function of metal composition. Future measurements of electrical contact resistance will be done through transmission line measurement structures, in order to determine the optimal alloy concentration for both electrical and thermal transport across the interface.
[1] P. E. Hopkins, M. Baraket, E. V. Barnat, T. E. Beechem, S. P. Kearney, J. C. Duda, J. T. Robinson, and S. G. Walton, Nano Lett. 12, 590 (2012).
–
Presenters
-
Dipanjan Saha
Mechanical Engineering, Carnegie Mellon University
Authors
-
Dipanjan Saha
Mechanical Engineering, Carnegie Mellon University
-
Xiaoxiao Yu
Chemical Engineering, Carnegie Mellon University
-
Zhitao Guo
Chemical Engineering, Carnegie Mellon University
-
Nicholas Golio
Chemical Engineering, Carnegie Mellon University
-
Mohamed Darwish
Electrical Engineering, Carnegie Mellon University
-
Yunus Kesim
Electrical Engineering, Carnegie Mellon University
-
Jeffrey Weldon
Electrical Engineering, Carnegie Mellon University
-
Andrew Gellman
Chemical Engineering, Carnegie Mellon University
-
Jonathan A Malen
Mechanical Engineering, Carnegie Mellon University