Mixed-dimensional vdW heterostructure optoelectronic devices using p-MoS₂ nanosheets

The advent of two-dimensional (2D) van der Waals (vdW) heterostructures, enabling the engineering of the heterostructure band alignment and resultant interfacial physical properties, has attracted strong scientific interest. The vdWs heterostructures provide the promise for developing novel near-infrared (NIR) optoelectronic devices, which play an important role in military, telecommunication, healthcare and so on. Moreover, the construction of the mixed-dimensional van der Waals (vdW) heterostructures with two-dimensional (2D) and one-dimensional (1D) materials can advantageously integrate their respective dimensional properties to produce new device functionalities and/or enhance device performance. In this talk, we report a LED based on a p-type MoS₂ nanosheet and an n-type CdSe NW, with strong electroluminescence centered at ∼709 nm. This novel 2D/1D vdW heterostructure, which takes advantages of both 2D and 1D semiconductors, enables potential future applications in electrically driven lasers, high-sensitivity sensors, and transparent flexible devices. We also report a NIR LED and self-powered photodetector device based on p-MoS₂/n-InSe vdWs heterostructures.