Barristor device based on graphene and carbon nanotube junction

We have investigated switching characteristics in graphene/semiconducting single-walled carbon nanotube (SWCNT) junction device, so-called graphene/SWCNT barristor. We modulated Schottky barrier between the graphene and the carbon nanotube by using top and bottom gate electrodes, and achieved on-off ratio of 10⁸ and the subthreshold swing of 74 meV/dec with high current density. This all-carbon device can be useful to graphene logic circuit, flexible electronics circuit and memory device.