Towards Room Temperature Plasmonic Lasing from Zn-Doped GaAs Nanowires

ORAL

Abstract

We investigated optically pumped lasing from zinc-doped GaAs nanowires (NWs) on a Au film and from NWs comprising a nominally 10 nm thick Au coating at temperatures ranging from 80 to 295 K. The NWs have an average diameter and length of 200 nm and 2.5 µm, respectively, and possess a 7 nm thin Al2O3 spacer layer surrounding the NWs. The NWs were optically excited with 150 fs laser pulses with a center wavelength of 770 nm which were provided by a Ti-Sapphire laser. Due to the shortness of the NWs only one longitudinal lasing mode resonates with the gain spectrum which extends from ~1.48 to 1.52 eV at 80 K. At higher temperature the lasing mode slightly shifts towards lower energy and weakens due to band-gap shrinkage and increasing non-radiative losses at surface states. The lasing output versus excitation power (L-L) plot at 80 and 295 K shows the characteristic “S” shape curve for NWs on Au. The L-L plot for Au coated NWs shows lasing at 80 K but suggests amplified spontaneous emission at 295 K due to higher plasmonic losses. A simulation of the experimental data with FDTD calculations reveals that lasing from NWs on Au is predominantly plasmonic while it has a hybrid photonic-plasmonic character in Au coated NWs.

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Presenters

  • Gyanan Aman

    Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221, U.S.A

Authors

  • Gyanan Aman

    Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221, U.S.A

  • Fatemesadat Mohammadi

    Department of Physics, University of Cincinnati, Cincinnati, OH 45221, U.S.A

  • Mykhaylo Lysevych

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University

  • Hoe Tan

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Department of Electronic and Materials Engineering, Australian National University

  • Chennupati Jagadish

    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT, 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200, Australia, Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Department of Electronic and Materials Engineering, Australian National University

  • Heidrun Schmitzer

    Department of Physics, Xavier University, Cincinnati, OH 45207, Department of Physics, Xavier University, Cincinnati, OH 45207, U.S.A.

  • Martin Fraenzl

    Department of Physics, University of Leipzig, 04103 Leipzig, Germany

  • Marc Cahay

    Department of Electrical Engineering and Computer Science, University of Cincinnati, Cincinnati, OH 45221, U.S.A

  • Hans Peter Wagner

    Department of Physics, University of Cincinnati, Cincinnati, OH 45221, U.S.A, Physics, University of Cincinnati