Resistive switching in tunnel junctions with a single-crystal La2NiO4 electrode

ORAL

Abstract

We study the resistive switching in tunnel junctions with single-crystal La2NiO4 electrodes. Such electro-resistive devices are promising candidates for future nonvolatile memory and reconfigurable logic applications thanks to their simple structure, scalability and endurance. Our tunnel junctions were prepared by painting a spot of conductive silver epoxy on the surface of La2NiO4 single crystal. The interface between the silver and the semiconducting single crystal served as a natural barrier forming planar normal metal/insulator/semiconductor (N-I-S) tunnel junctions with resistances ranging from a few tens to tens of thousands of Ohms. The current-voltage measurements performed on such junctions at room temperature demonstrated a bias-driven resistive switching with ratios above 1000% and high endurance. In situ measurements with two junctions (N-I-S-I-N) demonstrate the polarity-dependent resistive switching of the two (N-I-S and S-I-N) junctions and show no contribution from the bulk of the La2NiO4 crystal. Such an interfacial nature of the switching phenomenon is promising for fabrication of thin-film planar devices to be used in nonvolatile memory and logic.

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Presenters

  • Shida Shen

    Department of Physics and Texas Materials Institute, University of Texas at Austin, Physics Department and Texas Materials Institute, University of Texas at Austin

Authors

  • Shida Shen

    Department of Physics and Texas Materials Institute, University of Texas at Austin, Physics Department and Texas Materials Institute, University of Texas at Austin

  • Morgan Williamson

    Department of Physics and Texas Materials Institute, University of Texas at Austin, Physics Department and Texas Materials Institute, University of Texas at Austin

  • Gang Cao

    Department of Physics, University of Colorado-Boulder, Department of Physics, University of Colorado, Boulder CO 80309, Department of Physics, University of Colorado, Boulder, CO 80309, Department of Physics, University of Colorado at Boulder, Physics and Astronomy, University of Kentucky, University of Colorado, Boulder, University of Colorado Boulder

  • Jianshi Zhou

    Texas Materials Institute, University of Texas at Austin, University of Texas at Austin, Mechanical Engineering, University of Texas at Austin, Mechanical Engineering, University of Texas, University of Texas (Austin, USA), Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA

  • Maxim Tsoi

    Department of Physics and Texas Materials Institute, University of Texas at Austin, Physics Department and Texas Materials Institute, University of Texas at Austin