Epitaxial Nanoribbon Transfer Process for Quantum Spin Hall Devices

It has been shown that nanoribbon transistors consisting of of InAs or GaSb channels can be processed by transferring epitaxial semiconductor layers on to Si substrate, and further integrated into compound semiconductor CMOS circuits. In our research, we adept this technique and study transferring epitaxial InAs/InGaSb topological insulator to Si/SiO2 or FM-insulator substrate. We will describe the processing for the QSH devices and present their low temperature transport data.