Electron shuttling based error-correction architectures using quantum dot qubits

Spin-qubits based on electrons in gate-defined quantum dots [1] are currently one of the major candidates for quantum computers realized in semiconductor hosts.

The inherent dot mobility provided by the conceptual ease of electron shuttling in such gate-defined systems is a powerful resource which has been incorporated as a vital component in proposals for fault-tolerant spin-qubit architectures [2,3], with the assumption that such operations can be realized with very high fidelity and on relatively short time scales.

We address the issue of decoherence for such shuttling devices and present a possible realization of a scalable fault-tolerant quantum memory based on more realistic device models.

[1] D. Loss and D. P. DiVincenzo, Physical Review A 57, 120 (1998).
[2] J. M. Taylor et al., Nature Physics 1, 177 (2005).
[3] R. Li et al., Science Advances 4, eaar3960 (2018).