Fine-tuning electron entanglement in two-dimensional artificial atoms

The spatial correlation of few electrons confined in semiconductor quantum dots is of great interest for realizing solid state quantum computing devices. Tunability of inter-electron interaction in quantum dots through geometrical manipulations, and external fields facilitates an enhanced level of control of their electronic properties. To this end, there have been several proposals to define deterministic teleportation protocols for quantum information processing using these artificial atoms. However, for all application purposes it is important to fabricate devices operating at resonant entanglement values. Here, we develop an action integral formalism in coordinate space for solving few-particle wavefunctions in arbitrary confinements. We obtain the spatial entanglement values for a wide range of two-dimensional quantum dots with varying potentials. Spectroscopy of two-electron entanglement reveals several novel phenomena such as entanglement resonances due to anti-crossings of excited states, and electron cluster formation. We further investigate the dependence of entanglement on external electric and magnetic fields and discuss the fine-tuning of electron correlation for useful quantum processes.