Electronic structure of p-type transparent conducting oxide CuAlO2

ORAL

Abstract

Transparent Conducting Oxides (TCOs) are generally considered to be very distinctive material because of their combining of electrical conductivity with the visible light transmission in a single material. The delafossite oxide CuAlO2 is a p-type TCO which can be used to fabricate transparent p–n junction from TCO materials. In this work, we combine angle-resolved photoemission spectroscopy (ARPES) and X-ray emission and absorption spectroscopies (XES & XAS), to visualize the low-energy electronic structure. Fermi surface topology, detailed band structure, the effective mass of valence electrons, and the band gap size of the single crystal CuAlO2 were examined experimentally. The electronic structure obtained from ARPES measurements are compared with theoretical calculations. These results indicate that CuAlO2 is a good p-type TCO that may serve as a platform for optoelectronic applications.

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Presenters

  • Mohamed Salah

    ALS, Lawrence Berkeley National Laboratory

Authors

  • Mohamed Salah

    ALS, Lawrence Berkeley National Laboratory

  • Joonseok Yoon

    Department of Physics, Yonsei University

  • Xiaosong Liu

    ALS, Lawrence Berkeley National Laboratory

  • Wanli Yang

    Lawrence Berkeley National Laboratory, ALS, Lawrence Berkeley National Laboratory

  • Bongjin Simon Mun

    Department of Physics and Photon Science, Gwangju Institute of Science and Technology

  • Mohamed Mahmoud El-Desoky

    Physics Department, Suez University

  • Zahid Hussain

    Advanced Light Source, Lawrence Berkeley National Lab, Lawrence Berkeley Lab., ALS, Lawrence Berkeley National Laboratory

  • Honglyoul Ju

    Department of Physics, Yonsei University

  • Sung-Kwan Mo

    Lawrence Berkeley National Laboratory, Lawrence Berkeley National Lab, Advanced Light Source, Lawrence Berkeley National Lab, Advanced Light Source, Lawrence Berkeley National Laboratory, ALS, Lawrence Berkeley National Laboratory