THz emission peak at low voltage bias from stacked intrinsic Josephson junction Bi2Sr2CaCu2O8 terahertz sources
ORAL
Abstract
THz emission from these devices has previously been typically observed at frequencies between around 0.4 THz – 2 THz, corresponding to Josephson voltages of between 0.8 mV and 4 mV per intrinsic junction. However, we have recently observed a new type of emission which occurs at bias currents below the retrapping current of the stacked Josephson junctions. This unusual THz emission state is highly reproducible, is metastable over a timescale of hours, and shows systematic temperature dependence. The maximum emitted THz power that can be generated from this mode is comparable to that generated by the more well-established and better-understood THz emission modes in Bi2Sr2CaCu2O8 mesa sources.
We will discuss possible mechanisms for the unusual emission mode, together with future directions of related research.
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Presenters
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Karen J Kihlstrom
Physics, Queens College CUNY
Authors
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Karen J Kihlstrom
Physics, Queens College CUNY
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Timothy Benseman
Physics, Queens College CUNY
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Alexei Koshelev
Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Materials Science Division, Argonne Natl Lab, Argonne National Lab
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Ulrich Welp
Argonne National Laboratory, Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Materials Science Division, Argonne Natl Lab, Argonne National Lab
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Wai-Kwong Kwok
Argonne National Laboratory, Material Sciences, Argonne National Laboratory, Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Materials Science Division, Argonne Natl Lab, Argonne National Lab
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Kazuo Kadowaki
Institute for Materials Science, University of Tsukuba, University of Tsukuba