Phase transition from Mn-Bi₂Te₃ to MnBi₂Te₄

The realization of MnBi₂Te₄ film opens the vision to search rich topological effects in intrinsic magnetic topological insulator. In the cleaved single crystal samples, the high resolution angle-resolved photoemission spectroscopy (ARPES) shows the clear topological electronic structures, and the transverse resistance reaches quantization in a high external magnetic field . Those results indicate that 124 family materials can be an ideal platform for further exploring various topological phenomena. But in Mn-Bi-Te system, 124 structure is not the solely stable phase. Mn atoms can replace the position of Bi atoms to form a Mn doped Bi₂Te₃ phase. MnBi₄Te₇ and Mn₂Bi₂Te₅ are also predicted to be existed in this system. In order to give a clear phase diagram and give an instruction of growing Mn-Bi-Te material, we investigate the evolution of electronic energy band structures with increasing Mn doping level. We also study the temperature influence on the Mn-Bi-Te material.