Defects in 4H-SiC Studied by Electrically Detected Magnetic Resonance and Electrically Detected Electron Nuclear Resonance

We utilize electrically detected magnetic resonance (EDMR) and electrically detected electron nuclear double resonance (EDENDOR) to observe defects responsible for recombination in fully processed 4H-SiC bipolar junction transistors (BJTs). The EDMR response in these devices is detected via spin dependent recombination (SDR) within the space charge region of the forward biased emitter-base junction with the collector grounded. (We link the observed response to silicon vacancies in the 4H-SiC.) We demonstrate the application of EDENDOR on these devices. To the best of our knowledge, this is the first demonstration of EDENDOR on a fully processed device. The EDENDOR measurements combines the power of EDMR with a nuclear magnetic resonance (NMR) excitation, allowing for the identification of magnetic nuclei near the observed defects. Our EDENDOR measurements indicate the presence of ¹⁴N nuclei near the silicon vacancies that are measured with EDMR. This work brings the unparalleled analytical power of ENDOR to applications with functional nanoscale devices.