Hybrid spintronics as a novel platform for quantum sensing.

Defects in semiconductors are emerging as a robust solid-state platform for quantum sensing and quantum information processing. These applications demand efficient readout of the defect spin state with high fidelity. We propose a novel spin readout technique¹ based on a non-local hybrid spin-to-charge conversion that takes advantage of drift and diffusion of the charge carriers in semiconductors in the presence of electric field. In this approach, spin-dependent generation of charge carriers from the target defects with superior spin properties is coupled to emitters with high quantum efficiency, optical cycling frequency and favorable photoionization properties . We implement this technique in type IIa diamonds and demonstrate that it provides higher sensitivity compared to the conventional spin readout techniques. We note that the proposed approach is universal in its nature and can be applied to spin-active impurities in other semiconductor materials. In addition to that, we use this technique to characterize charge dynamics and capture cross-sections of optically active and dark defects in diamond.
1. H. Jayakumar et al. Time-integrated qubit measurements using digital memories. (submitted, under review)