High-density defect ensembles in SiC for superradiance and magnetometry

The silicon vacancy in SiC has recently become of great interest as a platform for quantum sensing and quantum information processing. In particular, recent theoretical work has shown that the spin 3/2 multiplet of a single silicon vacancy in 4H-SiC can achieve magnetic field sensitivities sufficient to detect single nuclear spins [1]. However, there has been less work done in the high-density, radiatively coupled regime in SiC. Superradiant coupling between atoms [2] and nitrogen vacancies in diamond [3] has been demonstrated experimentally and has been proposed as a route toward ultra-sensitive quantum sensing in the solid state. We explore the details of the superradiant transition in the 4H-SiC silicon vacancy and show possible routes toward engineering suitable defect ensembles.
[1] Phys. Rev. B, 95, 081405 (2017)
[2] Nature, 484, 78 (2012)
[3] Nat. Phys., 14, 1168 (2018)