Low-Voltage Control of Magnetism in Fe_0.49Rh_0.51/0.68PbMg_1/3Nb_2/3O₃-0.32PbTiO₃ Thin Films Heterostructures

With the rapid development of computing applications, researchers are motivated to develop novel low-energy consumption devices for information processing. Amongst candidate technology for such devices are low-power spin logics. Therein, magnetoelectric heterostructures remain a promising route to address the rising need of processing power. Previous research, however, has mainly utilized piezo-strains from piezoelectric bulk or thick films which require high voltages and energies due to their size.^[1] Here, using 100 nm-thick 0.68PbMg_1/3Nb_2/3O₃-0.32PbTiO₃ thin-films as actuator layers, we discuss the potential for ultra-low-voltage control of magnetism in Fe_0.49Rh_0.51 thin-films via strain. Leveraging routes for epitaxial integration of metallic ferromagnets on oxide thin films, initial studies have demonstrated reversible changes in anomalous Hall resistivity with small voltages applied to the 0.68PbMg_1/3Nb_2/3O₃-0.32PbTiO₃ at room temperature which are attributed to the strain induced ferromagnetic and antiferromagnetic phase transition in Fe_0.49Rh_0.51. Our findings reveal the feasibility of voltage control of magnetism with piezoelectric thin-films and can be used in low-voltage/energy computing.