State-of-the-art Quantum Dot devices from a full 300mm process line: towards scalable spin qubit devices

ORAL

Abstract

Intel continues with its efforts towards the fabrication of spin qubit devices in a full 300mm process line. Significant progress has been achieved on the fin-based process flow that yields QD devices with performance comparable to academic’s state-of-the-art devices. Among other important milestones of this work is the implementation of fin-to-fin charge sensing which is needed to operate in the single electron regime. We will also present updates on wide linear array devices as well as the current status of spin qubit device fabrication; both are key to the long-term implementation of scalable spin qubit devices in silicon for quantum computing technology.

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Presenters

  • Hubert C George

    Components Research, Intel Corporation, Hillsboro, OR, USA, Components Research, Intel Corporation, Intel Corporation

Authors

  • Hubert C George

    Components Research, Intel Corporation, Hillsboro, OR, USA, Components Research, Intel Corporation, Intel Corporation

  • Stephanie Bojarski

    Components Research, Intel Corporation, Hillsboro, OR, USA, Components Research, Intel Corporation, Intel Corporation

  • Ravi Pillarisetty

    Components Research, Intel Corporation, Intel Corporation

  • Brennen Mueller

    Components Research, Intel Corporation, Hillsboro, OR, USA, Components Research, Intel Corporation, Intel Corporation

  • Lester Lampert

    Components Research, Intel Corporation, Intel Corporation

  • Thomas Watson

    Components Research, Intel Corporation, Intel Corporation

  • Florian Luthi

    Components Research, Intel Corporation, Intel Corporation

  • Roman Caudillo

    Components Research, Intel Corporation, Intel Corporation

  • David J Michalak

    Components Research, Intel Corporation, Intel Corporation

  • Eric Henry

    Components Research, Intel Corporation, Intel Corporation

  • Otto Zietz

    Components Research, Intel Corporation, Intel Corporation

  • Jeanette Marie Roberts

    Components Research, Intel Corporation, Intel Corporation

  • Anne-Marije Zwerver

    QuTech and Kavli Institute of Nanoscience, TU Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience

  • Tobias Krähenmann

    QuTech and Kavli Institute of Nanoscience

  • Harmen Eenink

    Delft University of Technology, QuTech and Kavli Institute of Nanoscience

  • Giordano Scappucci

    Delft University of Technology, QuTech and Kavli Institute of Nanoscience, QuTech and Kavli Institute of Nanoscience, Delft University of Technology, QuTech, Delft University of Technology, Delft University of Technology, Delft, The Netherlands

  • Menno Veldhorst

    Delft University of Technology, QuTech and Kavli Institute of Nanoscience, University of Twente, QuTech, Delft University of Technology, Delft University of Technology, Delft, The Netherlands

  • Lieven M Vandersypen

    QuTech and Kavli Institute of Nanoscience, TU Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft University of Technology, Delft University of Technology, Delft, The Netherlands

  • Jim Clarke

    Components Research, Intel Corporation, Hillsboro, OR, USA, Components Research, Intel Corporation, Intel Corporation