Growth and analysis of rutile-structured (Ge,Sn)O2 alloy thin films
ORAL
Abstract
Ultra-wide bandgap (UWBG) semiconductors, whose bandgap is wider than 3.4 eV, have been gaining attentions as promising materials for future power-electronics devices. As a novel UWBG material, rutile-structured germanium oxide (r-GeO2) has emerged due to its theoretically excellent properties[1], that is, ambipolar dupability, high carrier mobility, and high thermal conductivity as well as its wide bandgap of 4.68 eV[2]. In addition, by realizing an alloy system of rutile-structured r-SnO2-r-GeO2-r-SiO2, bandgap engineering and an application of the heterostructures to power devices can be possible in the future. Recently, growth of r-GeO2 thin film has been reported[3,4].
In this work, we demonstrate r-(Gex,Sn1-x)O2 alloys in an entire Ge composition range (x=0.00, 0.37, 0.55, 0.82, and 1.00) by mist chemical vapor deposition. Physical and chemical properties at each x are measured by spectroscopic ellipsometry and X-ray photoelectron spectroscopy, respectively. These achievements advance the application of r-(Ge,Sn)O2/r-GeO2 heterostructures.
[1] Chae et al., APL 118, 260501 (2021).
[2] Stapelbroek et al., SSC 25, 959 (1978).
[3] Chae et al., APL 117, 072105 (2020).
[4] Takane et al, APL 119, 062104 (2021).
In this work, we demonstrate r-(Gex,Sn1-x)O2 alloys in an entire Ge composition range (x=0.00, 0.37, 0.55, 0.82, and 1.00) by mist chemical vapor deposition. Physical and chemical properties at each x are measured by spectroscopic ellipsometry and X-ray photoelectron spectroscopy, respectively. These achievements advance the application of r-(Ge,Sn)O2/r-GeO2 heterostructures.
[1] Chae et al., APL 118, 260501 (2021).
[2] Stapelbroek et al., SSC 25, 959 (1978).
[3] Chae et al., APL 117, 072105 (2020).
[4] Takane et al, APL 119, 062104 (2021).
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Presenters
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Hitoshi Takane
Kyoto University
Authors
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Hitoshi Takane
Kyoto University
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Kentaro Kaneko
Kyoto University