Cavity Quantum Electrodynamics in Silicon Carbide Photonics with Color Centers

ORAL

Abstract

We demonstrate cavity quantum electrodynamics experiments with the silicon vacancy in 4H-Silicon-Carbide-on-Insulator integrated photonics. We show nearly-transform-limited, stable quantum emission from silicon vacancy defects in a microdisk resonator and observe emitter-cavity cooperativity approaching unity. We observe single- and two-photon interference between a pair of silicon vacancies, a prerequisite for multi-emitter quantum photonics in Silicon Carbide.

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Publication: Lukin et al, 4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics, Nat. Photonics (2020)
Lukin et al., Spectrally reconfigurable quantum emitters enabled by optimized fast modulation, npj Quantum Info (2020)
Lukin et al., Integrated Quantum Photonics with Silicon Carbide: Challenges and Prospects, PRX Quantum (2020)
Lukin et al., manuscript in preparation.

Presenters

  • Daniil M Lukin

    Stanford University

Authors

  • Daniil M Lukin

    Stanford University

  • Melissa A Guidry

    Stanford University

  • Joshua Yang

    Stanford University

  • Sattwik Mishra

    Stanford University

  • Misagh Ghezellou

    Linkoping University

  • Hiroshi Abe

    National Institutes for Quantum Science and Technology (QST), Takasaki, Japan, National Institutes for Quantum Science and Technology

  • Takeshi Ohshima

    National Institutes for Quantum Science and Technology (QST), Takasaki, Japan, National Institutes for Quantum Science and Technology

  • Jawad Ul Hassan

    Linkoping University, Linköping University

  • Jelena Vuckovic

    Stanford University, Stanford Univ