Defects in Gallium Oxide

FOCUS · B41 · ID: 1067030

Presentations

  • Transition metals as shallow donors in Ga2O3

    ORAL

    –

    Presenters

    • Siavash Karbasizadeh

      University of California, Santa Barbara

    Authors

    • Siavash Karbasizadeh

      University of California, Santa Barbara

    • Sai Mu

      University of South Carolina

    • Chris G Van de Walle

      University of California, Santa Barbara

    View abstract →

  • Atomic-displacement threshold energies and defect generation in irradiated β-Ga<sub>2</sub>O<sub>3 </sub>: a first-principles investigation

    ORAL

    –

    Presenters

    • Blair Tuttle

      Penn State Univ, Erie

    Authors

    • Blair Tuttle

      Penn State Univ, Erie

    • Nathaniel Karom

      Allegheny College

    • Andrew O'Hara

      Department of Physics and Astronomy, Vanderbilt University, Vanderbilt University

    • Ronald D Schrimpf

      Department of Electrical and Computer Engineering, Vanderbilt University, Vanderbilt University

    • Sokrates T Pantelides

      Vanderbilt University, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University

    View abstract →

  • Defect and Dopant Characterization using Terahertz Electron Paramagnetic Resonance Ellipsometry: Fe in Ga<sub>2</sub>O<sup>3</sup>

    ORAL

    –

    Publication: M. Schubert et al., Appl. Phys Lett. 120, 102101(2022).

    Presenters

    • Mathias M Schubert

      University of Nebraska-Lincoln, University of Nebraska - Lincoln

    Authors

    • Mathias M Schubert

      University of Nebraska-Lincoln, University of Nebraska - Lincoln

    • Rafal Korlacki

      University of Nebraska - Lincoln

    • Steffen Richter

      Lund University

    • Sean Knight

      Lund University

    • Philipp Kuehne

      Linkoping University

    • Vallery Stanishev

      Lund University

    • Megan Stokey

      University of Nebraska-Lincoln

    • Zbigniew Galazka

      Leibniz-Institut für Kristallzüchtung, Leibniz Institute for Crystal Growth

    • Klaus Irmscher

      Leibniz Institute for Crystal Growth

    • Vanya Darakchieva

      Linköping University, Lund University

    View abstract →

  • Uniform and controlled Si doping of Ga<sub>2</sub>O<sub>3 </sub>by disilane via hybrid molecular beam epitaxy

    ORAL

    –

    Publication: 1. F. Alema, Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown b-Ga2O3," APL Mater. 7, 121110 (2019).
    2. Z. Feng, A. F. Anhar Uddin Bhuiyan, M. R. Karim, and H. Zhao, "MOCVD homoepitaxy of Si-doped (010) b-Ga2O3 thin films with superior transport properties," Appl. Phys. Lett. 114, 250601 (2019).
    3. Y. Zhang, F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and J. S. Speck, "MOCVD grown epitaxial b-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature," APL Mater. 7, 022506 (2019).
    4. S. Rafique, M. R. Karim, J. M. Johnson, J. Hwang, and H. Zhao, "LPCVD homoepitaxy of Si doped b-Ga2O3 thin films on (010) and (001) substrates," Appl. Phys. Lett. 112, 052104 (2018).
    5. M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, and G. Wagner, "Semiconducting Sn-doped b-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy," J. Mater. Sci. 51, 3650–3656 (2016).
    6. M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, and G. Wagner, "Si- and Sn-doped homoepitaxial b-Ga2O3 layers grown by MOVPE on (010)- oriented substrates," ECS J. Solid State Sci. Technol. 6, Q3040 (2017).
    7. K. D. Leedy, K. D. Chabak, V. Vasilyev, D. C. Look, J. J. Boeckl, J. L. Brown, S. E. Tetlak, A. J. Green, N. A. Moser, A. Crespo, D. B. Thomson, R. C. Fitch, J. P. McCandless, and G. H. Jessen, "Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) b-Ga2O3 by pulsed laser deposition," Appl. Phys. Lett. 111, 012103 (2017).
    8. N. K. Kalarickal, Z. Xia, J. McGlone, S. Krishnamoorthy, W. Moore, M. Brenner, A. R. Arehart, S. A. Ringel, and S. Rajan, "Mechanism of Si doping in plasma assisted MBE growth of b-Ga2O3," Appl. Phys. Lett. 115, 152106 (2019).
    9. E. Ahmadi, O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of b-Ga2O3 films grown by plasma-assisted molec- ular beam epitaxy," Appl. Phys. Express 10, 041102 (2017).
    10. N. Moser, J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, N. Peixoto, and G. Jessen, "Ge-doped b-Ga2O3 MOSFETs," IEEE Electron Device Lett. 38, 775–778 (2017).
    11. H. Okumura, M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, and J. S. Speck, "Systematic investigation of the growth rate of b-Ga2O3 (010) by plasma-assisted molecular beam epitaxy," Appl. Phys. Express 7, 095501 (2014).
    12. S.-H. Han, A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck, "n-type dopants in (001) b-Ga2O3 grown on (001) b-Ga2O3 substrates by plasma- assisted molecular beam epitaxy," Semicond. Sci. Technol. 33, 045001 (2018).
    13. A. Mauze, Y. Zhang, T. Itoh, E. Ahmadi, and J. S. Speck, "Sn doping of (010) b-Ga2O3 films grown by plasma-assisted molecular beam epitaxy," Appl. Phys. Lett. 117, 222102 (2020).
    14. K. Sasaki, A. Kuramata, T. Masui, G. Villora, K. Shimamura, and S. Yamakoshi, "Device-quality b-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy," Appl. Phys. Express 5, 035502 (2012).
    15. P. Vogt, F. V. Hensling, K. Azizie, C. S. Chang, D. Turner, J. Park, J. P. McCandless, H. Paik, B. J. Bocklund, G. Hoffman, O. Bierwagen, D. Jena, H. G. Xing, S. Mou, D. A. Muller, S. L. Shang, Z. K. Liu, and D. G. Schlom, "Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy," APL Mater. 9, 031101 (2021).
    16. J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T.J. Asel, S. Mou, P. Vogt, and H.G. Xing, "Controlled Si doping of ß-Ga2O3 by molecular beam epitaxy." Appl. Phys. Lett. 121, 7, 072108 (2022).

    Presenters

    • Zhuoqun Wen

      University of Michigan

    Authors

    • Zhuoqun Wen

      University of Michigan

    • Elaheh Ahmadi

      University of Michigan

    • Kamruzzaman Khan

      University of Michigan

    View abstract →

  • H trapping at the metastable cation vacancy in α-Ga<sub>2</sub>O<sub>3</sub> and α-Al<sub>2</sub>O<sub>3</sub>

    ORAL

    –

    Publication: Andrew Venzie, Amanda Portoff, Michael Stavola, W. Beall Fowler, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, and Stephen J. Pearton , "H trapping at the metastable cation vacancy in a-Ga2O3 and a-Al2O3", Appl. Phys. Lett. 120, 192101 (2022) https://doi.org/10.1063/5.0094707

    Presenters

    • Andrew B Venzie

      Lehigh University

    Authors

    • Andrew B Venzie

      Lehigh University

    • Amanda Portoff

      Lehigh University

    • Michael B Stavola

      Lehigh Univ, Lehigh University

    • W B Fowler

      Lehigh University

    • Stephen J Pearton

      University of Florida

    View abstract →

  • Chip-Scale Electron Spin Resonance Spectroscopy of Spin-Active Defects in Epitaxial β-Ga<sub>2</sub>O<sub>3</sub>

    ORAL

    –

    Presenters

    • Arjan Singh

      Cornell University

    Authors

    • Arjan Singh

      Cornell University

    • Jimy Encomendero

      Cornell University

    • Felix V Hensling

      Cornell University

    • Kathy Azizie

      Cornell University

    • Vladimir Protasenko

      Cornell University

    • Kazuki Nomoto

      Cornell University

    • Darrell G Schlom

      Cornell University, Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Materials Science and Engineering, Cornell University

    • Debdeep Jena

      Cornell University

    • Huili Grace Xing

      Cornell University

    • Farhan Rana

      Cornell University

    View abstract →

  • Self-Trapped Hole in Ultra Wide Bandgap β-Ga2O3 Films; Its Temperature Dependent Luminescences

    ORAL

    –

    Publication: [1] J. B. Varley, A. Janotti, C. Franchini, and C. G. Van de Walle, "Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides," Phys. Rev. B, vol. 85, no. 8, p. 081109, Feb. 2012, doi: 10.1103/PhysRevB.85.081109.

    [2] D. Thapa, J. Lapp, I. Lukman, and L. Bergman, "Ultra-wide bandgap ß-Ga2O3 films: Optical, phonon, and temperature response properties," AIP Adv., vol. 11, no. 12, p. 125022, Dec. 2021, doi: 10.1063/5.0074697.

    Presenters

    • Isiaka O Lukman

      University of Idaho

    Authors

    • Isiaka O Lukman

      University of Idaho

    • Leah Bergman

      university of Idaho

    View abstract →