Effect of substrate and growth method on vanadium dioxide thin films by RF magnetron sputtering

ORAL

Abstract

We explore two methods of vanadium dioxide (VO2) thin film deposition using off-axis RF magnetron sputtering on (100)- and (111)-oriented yttria-stabilized zirconia (YSZ): reactive sputtering of vanadium in an oxygen environment and sputtering of vanadium metal followed by oxidation to VO2. The reactive sputtering process on both substrate orientations yields VO2 (B), a metastable phase epitaxially stabilized by the YSZ surface. The metal sputtering and oxidation process on YSZ produces mainly the stable M1 phase of VO2. Using this method, we achieve thin films of (010)-oriented VO2 (M1) exhibiting a metal-insulator transition with a resistance ratio on the order of 103.

*This work at the University of Texas was supported in part by Sandia National Laboratory under grant LDRD and in part by the Air Force Office of Scientific Research under grant FA9550-18-1-0053.

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Publication: A. S. Christensen, A. B. Posadas, B. Zutter, P. Finnegan, S. Bhullar, A. A. Talin, A. A. Demkov, "Effect of substrate and growth method on vanadium dioxide thin films by RF magnetron sputtering: vanadium metal oxidation vs. reactive sputtering ", in prep.

Presenters

  • Adam S Christensen

    • University of Texas at Austin

Authors

  • Adam S Christensen

    • University of Texas at Austin

  • Agham Posadas

    • The University of Texas at Austin

  • Brian T Zutter

    • California State University, Los Angeles

  • Albert A Talin

    • Sandia National Laboratories

  • Alexander A Demkov

    • University of Texas at Austin