Ion beam induced infrared color centers in silicon as quantum emitters and sensors of irradiation damage

ORAL

Abstract

Infrared color centers in Si have become emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. Here, we studied the formation dynamics of G color centers in Si with as-received carbon under various ion beam irradiations, and demonstrated using G centers as a sensitive probe for irradiation damage and atomic disorder. For G centers formed by 1 MeV cw proton irradiation, the G center preserves narrow optical linewidth < 0.08 nm, as fluence increased from 109 cm-2 to 1013 cm-2. Meanwhile, under the ns-pulsed irradiation, the linewidth broadens significantly up to 0.13 nm, which indicates the pulsed protons creating a larger degree of atomic disorder. However, the PL decay time of G centers decreases for both irradiations as the proton fluence are increased, implying that the two different irradiations introduce a similar amount of nonradiative defects. The difference in linewidth broadening versus a similar amount of nonradiative defects between the two irradiations indicates that the pulsed proton introduces vacancy clusters causing a stronger degree of atomic disorder. In addition, we observe significantly broader G center linewidth (0.16 nm) from Ar irradiation, with 3 orders of magnitude more damage events, which further suggests the dense damage cascades induced vacancy clusters.

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Publication: 1. Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers, Physical Review B in press, preprint on arXiv:2206.04824
2. Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams, Quantum Beam Sci. 2022, 6(1), 13
3. Defect engineering of silicon with ion pulses from laser acceleration, preprint arXiv:2203.13781

Presenters

  • Wei Liu

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA, ATAP, Lawrence Berkeley National Lab

Authors

  • Wei Liu

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA, ATAP, Lawrence Berkeley National Lab

  • Qing Ji

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA, Lawrence Berkeley National Laboratory

  • Arun Persaud

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA, Lawrence Berkeley National Laboratory

  • Kaushalya Jhuria

    Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA, Lawrence Berkeley National Laboratory

  • Vsevolod Ivanov

    Lawrence Berkeley National Lab, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA, Lawrence Berkeley National Laboratory

  • Jacopo Simoni

    Lawrence Berkeley National Laboratory, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

  • Walid Redjem

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA, University of California, Berkeley, University of California Berkeley

  • Yertay Zhiyenbayev

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA, University of California, Berkeley

  • Christos Papapanos

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA, University of California Berkeley

  • Boubacar Kante

    Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA, University of California, Berkeley, University of California Berkeley

  • Liang Tan

    Lawrence Berkeley National Laboratory, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA, Lawrence Berkeley National Laboratory,USA

  • Javier G Lopez

    Centro Nacional de Aceleradores (U. Sevilla, CSIC, J. de Andalucia), Seville, 41092, Spain

  • Thomas Schenkel

    Lawrence Berkeley National Laboratory, Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA