Voltage Controlled Interlayer Magnetic Coupling in a 2D Magnet

Electric voltage controlled magnetism in spintronic devices provides unique opportunity to surpass the speed, efficiency, functionality and integration density of current electronic devices, which is one of the most versatile and efficient means to control the magnetism and enable new capabilities leveraging atomically thin two-dimensional (2D) magnet-based devices. Here, we demonstrate tunability of the interlayer magnetic coupling of even-layer van der Waals magnetic semiconductor CrSBr by electric gating in a graphite/h-BN/CrSBr/bottom electrodes vertical heterostructure. In evenlayer CrSBr, electric gating can switch the interlayer coupling between ferromagnetic and antiferromagnetic states. Hysteresis loops for the transition between these two magnetic states are observed to depend on gating voltage up to 140 K. Our work demonstrates voltage tunability of magnetism in 2D magnets, which is key to enabling multiple functionality and develop low-power spintronic, magnonic and valleytronic devices capable of on-chip communication.