Surface magnetoresistance in antiferromagnetic semiconductor CrSb2
ORAL
Abstract
Surface transport in bulk semiconducting materials has attracted much attention recently. In this respect, CrSb2 is an interesting material, since it is an antiferromagnetic narrow-gap semiconductor with a metallic surface state [1]. The previous report [1] has shown that the surface conduction dominates over bulk one at low temperatures below ~15 K. However, the magnetic property of the surface state remains to be investigated in contrast to the established antiferromagnetic structure of the bulk state [2,3]. In the present work, we perform the low-temperature measurement of angle–dependent magnetoresistance (ADMR) in high magnetic fields up to 24 T to explore novel magneto-transport property due to the possible surface magnetization. At 1.4 K where the surface conduction is well dominant, we show that ADMR at 24 T exhibits strong two-fold symmetry, which can be attributed to anisotropic magnetoresistance in the magnetic surface state. We will report the systematic results of temperature and magnetic-field dependence of surface ADMR.
[1] Q. Du et al., Phys. Rev. Res., 2, 043085 (2020).
[2] M. B. Stone et al., Phys. Rev. Lett., 108, 167202 (2012).
[3] M. B. Stone et al.,108, 167202 (2012).
[1] Q. Du et al., Phys. Rev. Res., 2, 043085 (2020).
[2] M. B. Stone et al., Phys. Rev. Lett., 108, 167202 (2012).
[3] M. B. Stone et al.,108, 167202 (2012).
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Publication: K. Nakagawa, M. Kimata, T. Yokouchi and Y. Shiomi, in preparation.
Presenters
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Kurea Nakagawa
The university of Tokyo
Authors
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Kurea Nakagawa
The university of Tokyo
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Motoi Kimata
Institute for Materials Research, Tohoku University, Tohoku university
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Tomoyuki Yokouchi
The University of Tokyo
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Yuki Shiomi
The University of Tokyo, The university of Tokyo, Department of Basic Science, University of Tokyo