Hydrogen ion implantation in lanthanum thin films for ambient pressure hydride formation
POSTER
Abstract
Near room temperature superconductivity of metal hydrides has been demonstrated experimentally at high pressures (>100 GPa). It is desirable to decrease the formation and stability pressure while retaining a superconducting hydride phase. We implanted lanthanum thin films with various doses of hydrogen ions at ambient pressure and examined the effect of superconductivity. The critical temperature decreased from 4.6 K to 3.2 K with broader superconducting transitions. Transmission electron microscopy showed increased substrate damage with increased ion dose and confirmed their granular structure. Although the superconducting hydride phase requires a higher H+ dose than measured here, we have successfully demonstrated that ion implantation at ambient pressure is a feasible technique for lanthanum hydride formation.
*This work was funded by the Laboratory Directed Research and Development Program at Sandia National Laboratories for the U.S. DOE/NNSA under contract DE-NA0003525. Portions of this work were performed under the auspices of the U.S. Department of Energy by LLNL under Contract DE-AC52-07NA27344. The instrumentation and facilities used were supported by DOE/BES (DE-FG02-99ER45775, VVS), the U.S. DOE/NNSA (DE-NA-0002006, CDAC; and DE-NA0001974, HPCAT), and the NSF (DMR-1809783). The Advanced Photon Source is operated by the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357.
Publication:P. Allen, S. Gilbert, M. Siegal, P. Lu, P. A. Sharma. "Hydrogen ion implantation in lanthanum thin films for ambient pressure hydride formation." Planned paper.
